Cale:OKDatasheet > Semiconductor Date > ST Microelectronics Datasheet > IRF822FI
IRF822FI spec.: N-channel enhancement mode power MOS transistor, 500V, 1.9A
Cale:OKDatasheet > Semiconductor Date > ST Microelectronics Datasheet > IRF822FI
IRF822FI spec.: N-channel enhancement mode power MOS transistor, 500V, 1.9A
Producător : ST Microelectronics
Ambalare : ISOWATT220
Pin : 3
Temperatura : Min -65 °C | Max 150 °C
Marime : 185 KB
Cerere : N-channel enhancement mode power MOS transistor, 500V, 1.9A