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IRF820FI spec.: N-channel enhancement mode power MOS transistor, 500V, 2.2A
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IRF820FI Datasheet şi Spec
Producător : ST Microelectronics
Ambalare : ISOWATT220
Pin : 3
Temperatura : Min -65 °C | Max 150 °C
Marime : 185 KB
Cerere : N-channel enhancement mode power MOS transistor, 500V, 2.2A
IRF820FI Descarca PDF