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IRF822 spec.: N-channel enhancement mode power MOS transistor, 500V, 2.8A
IRF822 similare
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- N-channel enhancement mode power MOS transistor, 500V, 3.0A
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- N-CHANNEL 500V - 2.5 OHM - 2.5A - TO-220 POWERMESH MOSFET
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IRF822 Datasheet şi Spec
Producător : ST Microelectronics
Ambalare : TO-220
Pin : 3
Temperatura : Min -65 °C | Max 150 °C
Marime : 185 KB
Cerere : N-channel enhancement mode power MOS transistor, 500V, 2.8A
IRF822 Descarca PDF