BUT12 similare

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BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
BUT11A
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- NPN silicon diffused power transistor. For switching power circuits
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BUT12 Datasheet şi Spec

Producător : WingShing

Ambalare : TO-220

Pin : 3

Temperatura : Min 0 °C | Max 0 °C

Marime : 71 KB

Cerere : NPN silicon diffused power transistor. For switching power circuits