Cale:OKDatasheet > Semiconductor Date > WingShing Datasheet > BUT11A
BUT11A spec.: NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
Cale:OKDatasheet > Semiconductor Date > WingShing Datasheet > BUT11A
BUT11A spec.: NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
Producător : WingShing
Ambalare : TO-220
Pin : 3
Temperatura : Min 0 °C | Max 0 °C
Marime : 24 KB
Cerere : NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.