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F2202 spec.: 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2202 Datasheet şi Spec
Producător : Polyfet RF
Ambalare :
Pin : 2
Temperatura : Min -65 °C | Max 150 °C
Marime : 40 KB
Cerere : 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2202 Descarca PDF