F2201 spec.: 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2201 similare

F2201
- 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2202
- 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2201 Datasheet şi Spec

Producător : Polyfet RF

Ambalare :

Pin : 2

Temperatura : Min -65 °C | Max 150 °C

Marime : 38 KB

Cerere : 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor