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F2013 spec.: 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2013 Datasheet şi Spec
Producător : Polyfet RF
Ambalare :
Pin : 4
Temperatura : Min -65 °C | Max 150 °C
Marime : 41 KB
Cerere : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2013 Descarca PDF