F2012 spec.: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 similare

F2012
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2013
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 Datasheet şi Spec

Producător : Polyfet RF

Ambalare :

Pin : 2

Temperatura : Min -65 °C | Max 150 °C

Marime : 40 KB

Cerere : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor