F1174 similare

  • F1170
    • 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1174
    • 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1174 Datasheet şi Spec

Producător : Polyfet RF 

Ambalare :  

Pin : 4 

Temperatura : Min -65 °C | Max 150 °C

Marime : 49 KB

Cerere : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1174 Descarca PDF