F1170 spec.: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1170 similare

F1170
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1174
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1170 Datasheet şi Spec

Producător : Polyfet RF

Ambalare :

Pin : 4

Temperatura : Min -65 °C | Max 150 °C

Marime : 47 KB

Cerere : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor