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MGW12N120D spec.: Insulated gate bipolar transistor with anti-parallel diode
MGW12N120D similare
- MGW12N120
- Insulated gate bipolar transistor
- MGW12N120D
- Insulated gate bipolar transistor with anti-parallel diode
MGW12N120D Datasheet şi Spec
Producător : Motorola
Ambalare : TO-247AE
Pin : 3
Temperatura : Min -55 °C | Max 150 °C
Marime : 274 KB
Cerere : Insulated gate bipolar transistor with anti-parallel diode
MGW12N120D Descarca PDF