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MGW12N120 spec.: Insulated gate bipolar transistor
MGW12N120 similare
- MGW12N120
- Insulated gate bipolar transistor
- MGW12N120D
- Insulated gate bipolar transistor with anti-parallel diode
MGW12N120 Datasheet şi Spec
Producător : Motorola
Ambalare : TO-247AE
Pin : 3
Temperatura : Min -55 °C | Max 150 °C
Marime : 250 KB
Cerere : Insulated gate bipolar transistor
MGW12N120 Descarca PDF