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IRFB59N10D spec.: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFB59N10D similare
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IRFB59N10D Datasheet şi Spec
Producător : IR
Ambalare :
Pin : 3
Temperatura : Min -55 °C | Max 175 °C
Marime : 151 KB
Cerere : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFB59N10D Descarca PDF