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IRFB260N spec.: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
IRFB260N similare
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- IRFB260N
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
- IRFB31N20D
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IRFB260N Datasheet şi Spec
Producător : IR
Ambalare :
Pin : 3
Temperatura : Min -55 °C | Max 175 °C
Marime : 98 KB
Cerere : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
IRFB260N Descarca PDF