Cale:OKDatasheet > Semiconductor Date > Usha Datasheet > MJE2955T
MJE2955T spec.: PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W.
Cale:OKDatasheet > Semiconductor Date > Usha Datasheet > MJE2955T
MJE2955T spec.: PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W.
Producător : Usha
Ambalare : TO-220
Pin : 3
Temperatura : Min -65 °C | Max 150 °C
Marime : 52 KB
Cerere : PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W.