Cale:OKDatasheet > Semiconductor Date > Usha Datasheet > 2N3055
2N3055 spec.: High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W.
2N3055 similare
- 2N3055
- High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W.
- 2N3055
- NPN silicon power transistor. 15Amp, 60V, 115Watt. These devices are designed for general purpose switching and amplifier applications.
- 2N3055H
- NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications.
2N3055 Datasheet şi Spec
Producător : Usha
Ambalare : TO-3
Pin : 3
Temperatura : Min -65 °C | Max 200 °C
Marime : 52 KB
Cerere : High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W.
2N3055 Descarca PDF