Cale:OKDatasheet > Semiconductor Date > Shanghai Sunrise Datasheet > RC30S08G
RC30S08G spec.: Silicon GPP cell rectifier. Max repetitive peak reverse voltage 800 V. Max average forward current 30 A.
RC30S08G similare
- RC30S01G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 30 A.
- RC30S02
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 30 A.
- RC30S02G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 30 A.
- RC30S04
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 30 A.
- RC30S04G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 30 A.
- RC30S06
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A.
- RC30S06G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A.
- RC30S06G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A.
RC30S08G Datasheet şi Spec
Producător : Shanghai Sunrise
Ambalare :
Pin : 0
Temperatura : Min -50 °C | Max 150 °C
Marime : 18 KB
Cerere : Silicon GPP cell rectifier. Max repetitive peak reverse voltage 800 V. Max average forward current 30 A.
RC30S08G Descarca PDF