Cale:OKDatasheet > Semiconductor Date > ST Microelectronics Datasheet > MJD127-1
MJD127-1 spec.: PNP darlington transistor for high DC current gain, 100V, 5A
MJD127-1 similare
- MJD112
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD117
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122-1
- "NPN darlington transistor for high DC current gain, 100V, 5A"
- MJD122T4
- NPN darlington transistor for high DC current gain, 100V, 5A
- MJD127-1
- PNP darlington transistor for high DC current gain, 100V, 5A
- MJD127T4
- PNP darlington transistor for high DC current gain, 100V, 5A
MJD127-1 Datasheet şi Spec
Producător : ST Microelectronics
Ambalare : TO-251
Pin : 3
Temperatura : Min -65 °C | Max 150 °C
Marime : 100 KB
Cerere : PNP darlington transistor for high DC current gain, 100V, 5A
MJD127-1 Descarca PDF