Cale:OKDatasheet > Semiconductor Date > SANYO Datasheet > 2SJ229
2SJ229 spec.: P-channel MOS silicon FET, very high-speed switching application
2SJ229 similare
- 2SJ225
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ225
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ226
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ228
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ229
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ230
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ231
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ232
- P-channel MOS silicon FET, very high-speed switching application
2SJ229 Datasheet şi Spec
Producător : SANYO
Ambalare : 2085
Pin : 3
Temperatura : Min 0 °C | Max 0 °C
Marime : 86 KB
Cerere : P-channel MOS silicon FET, very high-speed switching application
2SJ229 Descarca PDF