2SC2911 spec.: NPN epitaxial planar silicon transistor, 160V/140mA high-voltage switching and AF 100W predriver application

2SC2911 similare

2SC2078
- NPN epitaxial planar silicon transistor, 27 MHz RF power amp application
2SC2314
- NPN epitaxial planar silicon transistor, 27 MHz CB transceiver driver application
2SC2344
- NPN epitaxial planar silicon transistor, high-voltag switching, AF power amp, 100W output predriver application
2SC2362
- "NPN epitaxial planar silicon transistor, high voltag, low-noise amp application"
2SC2814
- NPN epitaxial planar silicon transistor, high-frequency general-purpose amp application
2SC2814
- NPN transistor for high-frequency general-purpose amplifier applications
2SC2814
- NPN epitaxial planar silicon transistor, high-frequency general-purpose amp application
2SC2839
- NPN transistor for HF amplifier applications

2SC2911 Datasheet şi Spec

Producător : SANYO

Ambalare : 2009A

Pin : 3

Temperatura : Min 0 °C | Max 0 °C

Marime : 114 KB

Cerere : NPN epitaxial planar silicon transistor, 160V/140mA high-voltage switching and AF 100W predriver application