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S8201 spec.: 4 Watt, silicon gate enhancement mode RF power VDMOS transistor
S8201 Datasheet şi Spec
Producător : Polyfet RF
Ambalare :
Pin : 8
Temperatura : Min -65 °C | Max 150 °C
Marime : 40 KB
Cerere : 4 Watt, silicon gate enhancement mode RF power VDMOS transistor
S8201 Descarca PDF