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P204 LQ821 SM706 F2041 F2211 LR401 SH702 SP702 F1070 F1415 SK202 F1007 SR706 F1060
Partea Nu | Producător | Cerere |
---|---|---|
L8701P | Polyfet RF | 30 Watt, silicon gate enhancement mode RF power LDMOS transistor |
F1034 | Polyfet RF | 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
F1410 | Polyfet RF | 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
SP204 | Polyfet RF | 15 Watt, silicon gate enhancement mode RF power VDMOS transistor |
LQ821 | Polyfet RF | 20 Watt, silicon gate enhancement mode RF power LDMOS transistor |
SM706 | Polyfet RF | 135 Watt, silicon gate enhancement mode RF power VDMOS transistor |
F2041 | Polyfet RF | 15 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
F2211 | Polyfet RF | 15 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
LR401 | Polyfet RF | 130 Watt, silicon gate enhancement mode RF power LDMOS transistor |
SH702 | Polyfet RF | 90 Watt, silicon gate enhancement mode RF power VDMOS transistor |
SP702 | Polyfet RF | 40 Watt, silicon gate enhancement mode RF power VDMOS transistor |
F1070 | Polyfet RF | 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
F1415 | Polyfet RF | 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
SK202 | Polyfet RF | 10 Watt, silicon gate enhancement mode RF power VDMOS transistor |
F1007 | Polyfet RF | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
SR706 | Polyfet RF | 300 Watt, silicon gate enhancement mode RF power VDMOS transistor |
F1060 | Polyfet RF | 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |