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F1415 spec.: 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1415 Datasheet şi Spec
Producător : Polyfet RF
Ambalare :
Pin : 4
Temperatura : Min -65 °C | Max 150 °C
Marime : 42 KB
Cerere : 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1415 Descarca PDF