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LZ402 spec.: 125 Watt, silicon gate enhancement mode RF power LDMOS transistor
LZ402 similare
- LZ402
- 125 Watt, silicon gate enhancement mode RF power LDMOS transistor
LZ402 Datasheet şi Spec
Producător : Polyfet RF
Ambalare :
Pin : 2
Temperatura : Min -65 °C | Max 150 °C
Marime : 39 KB
Cerere : 125 Watt, silicon gate enhancement mode RF power LDMOS transistor
LZ402 Descarca PDF