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LX703 spec.: 100 Watt, silicon gate enhancement mode RF power LDMOS transistor
LX703 similare
- LX703
- 100 Watt, silicon gate enhancement mode RF power LDMOS transistor
LX703 Datasheet şi Spec
Producător : Polyfet RF
Ambalare :
Pin : 2
Temperatura : Min -65 °C | Max 150 °C
Marime : 40 KB
Cerere : 100 Watt, silicon gate enhancement mode RF power LDMOS transistor
LX703 Descarca PDF