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LQ801 spec.: 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ801 similare
- LQ801
- 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ801 Datasheet şi Spec
Producător : Polyfet RF
Ambalare :
Pin : 4
Temperatura : Min -65 °C | Max 150 °C
Marime : 38 KB
Cerere : 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ801 Descarca PDF