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LC801 spec.: 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LC801 similare
- LC801
- 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LC801 Datasheet şi Spec
Producător : Polyfet RF
Ambalare :
Pin : 6
Temperatura : Min -65 °C | Max 150 °C
Marime : 40 KB
Cerere : 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LC801 Descarca PDF