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LB401 spec.: 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LB401 similare
- LB401
- 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LB401 Datasheet şi Spec
Producător : Polyfet RF
Ambalare :
Pin : 4
Temperatura : Min -65 °C | Max 150 °C
Marime : 41 KB
Cerere : 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LB401 Descarca PDF