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L8821P spec.: 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P similare
- L8821P
- 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P Datasheet şi Spec
Producător : Polyfet RF
Ambalare : SO-8
Pin : 8
Temperatura : Min -65 °C | Max 150 °C
Marime : 43 KB
Cerere : 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P Descarca PDF