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L8801P spec.: 10 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8801P Datasheet şi Spec
Producător : Polyfet RF
Ambalare : SO-8
Pin : 8
Temperatura : Min -65 °C | Max 150 °C
Marime : 43 KB
Cerere : 10 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8801P Descarca PDF