F3002 spec.: 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F3002 similare

F3002
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F3002 Datasheet şi Spec

Producător : Polyfet RF

Ambalare :

Pin : 4

Temperatura : Min -65 °C | Max 150 °C

Marime : 39 KB

Cerere : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor