F2021 spec.: 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2021 similare

F2021
- 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2021 Datasheet şi Spec

Producător : Polyfet RF

Ambalare :

Pin : 2

Temperatura : Min -65 °C | Max 150 °C

Marime : 40 KB

Cerere : 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor