F1535 spec.: 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1535 similare

F1535
- 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1535 Datasheet şi Spec

Producător : Polyfet RF

Ambalare :

Pin : 4

Temperatura : Min -65 °C | Max 150 °C

Marime : 39 KB

Cerere : 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor