F1510 spec.: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1510 similare

F1510
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1516
- 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1510 Datasheet şi Spec

Producător : Polyfet RF

Ambalare :

Pin : 2

Temperatura : Min -65 °C | Max 150 °C

Marime : 39 KB

Cerere : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor