F1207 spec.: 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1207 similare

F1206
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1207
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1208
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1209
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1207 Datasheet şi Spec

Producător : Polyfet RF

Ambalare :

Pin : 4

Temperatura : Min -65 °C | Max 150 °C

Marime : 40 KB

Cerere : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor