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F1107 similare

  • F1107
    • 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1108
    • 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1108
    • 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1107 Datasheet şi Spec

Producător : Polyfet RF 

Ambalare :  

Pin : 4 

Temperatura : Min -65 °C | Max 150 °C

Marime : 42 KB

Cerere : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1107 Descarca PDF