F1081 spec.: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1081 similare

F1081
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1081 Datasheet şi Spec

Producător : Polyfet RF

Ambalare :

Pin : 4

Temperatura : Min -65 °C | Max 150 °C

Marime : 43 KB

Cerere : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor