F1063 spec.: 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

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F1063 Datasheet şi Spec

Producător : Polyfet RF

Ambalare :

Pin : 6

Temperatura : Min -65 °C | Max 150 °C

Marime : 35 KB

Cerere : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor