F1040 spec.: 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1040 similare

F1040
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1040 Datasheet şi Spec

Producător : Polyfet RF

Ambalare :

Pin : 8

Temperatura : Min -65 °C | Max 150 °C

Marime : 35 KB

Cerere : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor