F1019 spec.: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1019 similare

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- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1019 Datasheet şi Spec

Producător : Polyfet RF

Ambalare :

Pin : 4

Temperatura : Min -65 °C | Max 150 °C

Marime : 41 KB

Cerere : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor