F1003 spec.: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1003 similare

F1001
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1001C
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1003
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1004
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1005
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1006
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1007
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1003 Datasheet şi Spec

Producător : Polyfet RF

Ambalare :

Pin : 4

Temperatura : Min -65 °C | Max 150 °C

Marime : 40 KB

Cerere : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor