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PHX8N50E spec.: 500 V, power MOS transistor avalanche energy rated
PHX8N50E Datasheet şi Spec
Producător : Philips
Ambalare : SOT
Pin : 3
Temperatura : Min -55 °C | Max 150 °C
Marime : 81 KB
Cerere : 500 V, power MOS transistor avalanche energy rated
PHX8N50E Descarca PDF