Cale:OKDatasheet > Semiconductor Date > Philips Datasheet > PHX3N40E
PHX3N40E spec.: 400 V, power MOS transistor avalanche energy rated
PHX3N40E similare
- PHX3055E
- 55 V, N-channel trenchMOS transistor
- PHX3055L
- 60 V, power MOS transistor logic level FET
- PHX3N40E
- 400 V, power MOS transistor avalanche energy rated
- PHX3N40E
- 400 V, power MOS transistor avalanche energy rated
- PHX3N50E
- PowerMOS transistor. Avalanche energy rated.
- PHX3N60E
- PowerMOS transistor. Avalanche energy rated.
- PHX3N60E
- 600 V, power MOS transistor avalanche energy rated
- PHX3N60E
- 600 V, power MOS transistor avalanche energy rated
PHX3N40E Datasheet şi Spec
Producător : Philips
Ambalare : SOT
Pin : 3
Temperatura : Min -55 °C | Max 150 °C
Marime : 70 KB
Cerere : 400 V, power MOS transistor avalanche energy rated
PHX3N40E Descarca PDF