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PHW8ND50E spec.: 500 V, power MOS transistor FREDFET, avalanche energy rated
PHW8ND50E similare
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- 500 V, power MOS transistor avalanche energy rated
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- 500 V, power MOS transistor FREDFET, avalanche energy rated
PHW8ND50E Datasheet şi Spec
Producător : Philips
Ambalare : SOT
Pin : 3
Temperatura : Min -55 °C | Max 150 °C
Marime : 80 KB
Cerere : 500 V, power MOS transistor FREDFET, avalanche energy rated
PHW8ND50E Descarca PDF