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PHB7N60E spec.: 600 V, power MOS transistor avalanche energy rated
PHB7N60E similare
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- 55 V, N-channel enhancement mode field-effect transistor
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- PHB7N60E
- 600 V, power MOS transistor avalanche energy rated
PHB7N60E Datasheet şi Spec
Producător : Philips
Ambalare : SOT
Pin : 3
Temperatura : Min -55 °C | Max 150 °C
Marime : 100 KB
Cerere : 600 V, power MOS transistor avalanche energy rated
PHB7N60E Descarca PDF