Cale:OKDatasheet > Semiconductor Date > Philips Datasheet > PHB6ND50E
PHB6ND50E spec.: 500 V, power MOS transistor FREDFET, avalanche energy rated
Cale:OKDatasheet > Semiconductor Date > Philips Datasheet > PHB6ND50E
PHB6ND50E spec.: 500 V, power MOS transistor FREDFET, avalanche energy rated
Producător : Philips
Ambalare : SOT
Pin : 3
Temperatura : Min -55 °C | Max 150 °C
Marime : 70 KB
Cerere : 500 V, power MOS transistor FREDFET, avalanche energy rated