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PHB6N50E spec.: 500 V, power MOS transistor avalanche energy rated
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PHB6N50E Datasheet şi Spec
Producător : Philips
Ambalare : SOT
Pin : 3
Temperatura : Min -55 °C | Max 150 °C
Marime : 84 KB
Cerere : 500 V, power MOS transistor avalanche energy rated
PHB6N50E Descarca PDF