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BUK555-200B spec.: PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.
BUK555-200B similare
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BUK555-200B Datasheet şi Spec
Producător : Philips
Ambalare : TO220AB
Pin : 3
Temperatura : Min 0 °C | Max 175 °C
Marime : 76 KB
Cerere : PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.
BUK555-200B Descarca PDF