VTE3324LA spec.: GaAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).

VTE3324LA similare

VTE3322LA
- GaAs infrared emitting diode. Irradiance(typ) 1.3 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).
VTE3324LA
- GaAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).
VTE3372LA
- "GaALAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm)."
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VTE3324LA Datasheet şi Spec

Producător : PerkinElmer

Ambalare : T-1

Pin : 2

Temperatura : Min -40 °C | Max 100 °C

Marime : 24 KB

Cerere : GaAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).